may 2005 mitsubishi pm50rlb060 flat-base type insulated package pm50rlb060 feature a) adopting new 5th generation igbt (cstbt) chip, which performance is improved by 1 m fine rule process. for example, typical v ce (sat)=1.5v @tj=125 c b) i adopt the over-temperature conservation by tj detection of cstbt chip, and error output is possible from all each con- servation upper and lower arm of ipm. c) new small package reduce the package size by 32%, thickness by 22% from s-dash series. d) current rating of brake part increased. 60% for the current rating of inverter part. ?3 50a, 600v current-sense igbt type inverter ? 30a, 600v current-sense regenerative brake igbt ? monolithic gate drive & protection logic ? detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (p-fo available from upper arm devices) ? acoustic noise-less 3.7kw class inverter application ? ul recognized yellow card no.e80276(n) file no.e80271 application general purpose inverter, servo drives and other motor controls package outlines dimensions in mm 22 7.75 98.25 2.5 23 23 23 19.5 55 25.75 25 17 16 3 19- 0.5 9.5 11.5 27.5 9.5 1 1 1.5 1.5 2- 2.5 106 0.25 66.5 19.75 3.25 7 4 4 35 4 4 4 44 44 44 4 16 15.25 6-2 3-2 3-2 3-2 16 16 120 1. vupc 2. ufo 3. up 4. vup1 5. vvpc 6. vfo 7. vp 8. vvp1 9. vwpc 10. wfo 11. wp 12. vwp1 13. vnc 14. vn1 15. br 16. un 17. vn 18. wn 19. fo terminal code np 15 buvw 91319 4- 2.5 mounting holes 2- 5.5
mitsubishi pm50rlb060 flat-base type insulated package may 2005 v ces i c i cp p c t j collector-emitter voltage collector current collector current (peak) collector dissipation junction temperature v d = 15v, v cin = 15v t c = 25 c t c = 25 c t c = 25 c (note-1) v a a w c maximum ratings (tj = 25 c, unless otherwise noted) inverter part symbol parameter condition ratings unit 600 50 100 131 C 20 ~ +150 internal functions block diagram v ces i c i cp p c v r(dc) i f t j brake part collector-emitter voltage collector current collector current (peak) collector dissipation fwdi rated dc reverse voltage fwdi forward current junction temperature v d = 15v, v cin = 15v t c = 25 c t c = 25 c t c = 25 c (note-1) t c = 25 c t c = 25 c v a a w v a c symbol parameter condition ratings unit 600 30 60 103 600 30 C 20 ~ +150 v fo i fo control part v ma 20 20 supply voltage input voltage fault output supply voltage fault output current symbol parameter condition ratings unit applied between : v up1 -v upc v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc applied between : u p -v upc , v p -v vpc w p -v wpc , u n ? v n ? w n ? b r -v nc applied between : u fo -v upc , v fo -v vpc , w fo -v wpc f o -v nc sink current at u fo , v fo , w fo , f o terminals 20 20 v d v cin v v v n u n w p v wp1 wf o v wpc v p v vp1 vf o v vpc u p v up1 uf o v upc br bnwvup fo 1.5k 1.5k 1.5k 1.5k v nc v n1 w n gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot
mitsubishi pm50rlb060 flat-base type insulated package may 2005 parameter symbol supply voltage protected by sc supply voltage (surge) storage temperature isolation voltage condition v cc(surge) t stg v iso ratings v cc(prot) 400 500 C 40 ~ +125 2500 unit v c v rms v v d = 13.5 ~ 16.5v, inverter part, t j = +125 c start applied between : p-n, surge value 60hz, sinusoidal, charged part to base, ac 1 min. 2.1 2.0 3.3 2.4 0.4 1.0 2.5 1.0 1 10 min. typ. max. collector-emitter saturation voltage collector-emitter cutoff current C i c = 50a, v d = 15v, v cin = 15v (fig. 2) t j = 25 c t j = 125 c electrical characteristics (tj = 25 c, unless otherwise noted) inverter part parameter symbol condition v ce(sat) i ces v ec t on t rr t c(on) t off t c(off) limits 0.5 1.6 1.5 2.2 1.0 0.2 0.4 1.2 0.5 t j = 25 c t j = 125 c fwdi forward voltage switching time v d = 15v, v cin = 0v ? 15v v cc = 300v, i c = 50a t j = 125 c inductive load (fig. 3,4) v ce = v ces , v cin = 15v (fig. 5) v d = 15v, i c = 50a v cin = 0v (fig. 1) total system v ma v s unit up igbt 29.0 C 7.3 vp wp un vn wn br fwdi 29.5 1.6 igbt 64.6 C 7.3 fwdi 65.1 2.1 igbt 85.9 C 7.3 fwdi 86.4 2.1 igbt 38.1 5.3 fwdi 37.6 C 4.6 igbt 54.8 5.3 fwdi 55.3 C 4.6 igbt 76.1 5.3 fwdi 75.6 C 4.6 igbt 18.3 C 7.4 fwdi 22.4 7.0 arm axis x y bottom view * if you use this value, r th(f-a) should be measured just under the chips. (note-1) tc (under the chip) measurement point is below. (unit : mm) 0.95* 1.61* 1.21* 2.19* 0.038 c/w r th(j-c)q r th(j-c)f r th(j-c)q r th(j-c)f r th(c-f) inverter igbt (per 1 element) (note-1) inverter fwdi (per 1 element) (note-1) brake igbt (note-1) brake fwdi (note-1) case to fin, (per 1 module) thermal grease applied (note-1) symbol condition unit min. junction to case thermal resistances thermal resistances contact thermal resistance parameter limits typ. max.
mitsubishi pm50rlb060 flat-base type insulated package may 2005 3.5 mounting part screw : m5 symbol parameter mounting torque weight condition unit n ? m g limits min. typ. max. 2.5 3.0 340 mechanical ratings and characteristics v ce(sat) i ces v fm v ma min. typ. max. v collector-emitter saturation voltage fwdi forward voltage collector-emitter cutoff current i f = 30a (fig. 2) t j = 25 c t j = 125 c unit parameter symbol condition limits 2.1 2.0 3.3 1 10 1.6 1.5 2.2 t j = 25 c t j = 125 c brake part v d = 15v, i c = 30a v cin = 0v (fig. 1) v ce = v ces , v cin = 15v (fig. 5) v d = 15v, v cin = 15v applied between : u p -v upc , v p -v vpc , w p -v wpc u n ? v n ? w n ? b r -v nc i d c v ma ms 30 10 1.8 2.3 12.5 0.01 15 ma circuit current input on threshold voltage input off threshold voltage short circuit trip level short circuit current delay time over temperature protection supply circuit under-voltage protection fault output current minimum fault output pulse width v th(on) v th(off) sc t off(sc) ot ot r uv uv r i fo(h) i fo(l) t fo trip level reset level trip level reset level control part 1.2 1.7 100 60 135 11.5 1.0 parameter symbol condition max. min. typ. unit limits 20 5 1.5 2.0 0.2 145 125 12.0 12.5 10 1.8 (note-2) fault output is given only when the internal sc, ot & uv protections schemes of either upper or lower arm device operat e to protect it. v d = 15v detect tj of igbt chip C 20 t j 125 c v d = 15v, v fo = 15v (note-2) v d = 15v (note-2) v s v n1 -v nc v *p1 -v *pc inverter part brake part a C 20 t j 125 c, v d = 15v (fig. 3,6) v d = 15v (fig. 3,6) recommended conditions for use recommended value unit condition symbol parameter v applied across p-n terminals applied between : v up1 -v upc , v vp1 -v vpc v wp1 -v wpc , v n1 -v nc (note-3) applied between : u p -v upc , v p -v vpc , w p -v wpc u n ? v n ? w n ? b r -v nc using application circuit of fig. 8 for ipm s each input signals (fig. 7) supply voltage control supply voltage input on voltage input off voltage pwm input frequency arm shoot-through blocking time 400 15 1.5 0.8 9.0 20 2.0 v cc v cin(on) v cin(off) f pwm t dead v d v khz s v (note-3) with ripple satisfying the following conditions: dv/dt swing 5v/ s, variation 2v peak to peak
mitsubishi pm50rlb060 flat-base type insulated package may 2005 precautions for testing 1. before appling any control supply voltage (v d ), the input terminals should be pulled up by resistores, etc. to their corre- sponding supply voltage and each input signal should be kept off state. after this, the specified on and off level setting for each input signal should be done. 2. when performing sc tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above v ces rating of the device. (these test should not be done by using a curve tracer or its equivalent.) p, (u,v,w,b) u,v,w, (n) u,v,w,b, (n) v d (all) in fo in fo v d (all) v cin (0v) ic v v p, (u,v,w) v cin (15v) C ic fig. 7 dead time measurement point example fig. 1 v ce(sat) test fig. 2 v ec , (v fm ) test 0v 1.5v 1.5v 1.5v 2v 2v 2v 0v t t t dead t dead t dead 1.5v: input on threshold voltage vth(on) typical value, 2v: input off threshold voltage vth(off) typical value ipm input signal v cin (upper arm) ipm input signal v cin (lower arm) 10% 90% trr irr tr td(on) tc(on) tc(off) td(off) v cin ic v ce 10% 10% 10% 90% tf (ton= td(on) + tr) (toff= td(off) + tf) fo fo p n n c s c s u,v,w vcc vcc ic ic v d (all) v d (all) p u,v,w v cin v cin v cin ( 15v ) v cin ( 15v ) fo fo fig. 3 switching time and sc test circuit fig. 4 switching time test waveform a) lower arm switching signal input (upper arm) signal input (lower arm) signal input (upper arm) signal input (lower arm) b) upper arm switching v cin fig. 5 i ces test fig. 6 sc test waveform sc short circuit current toff(sc) v d (all) u,v,w, (n) p, (u,v,w,b) a pulse v ce v cin (15v) ic fo in fo constant current
mitsubishi pm50rlb060 flat-base type insulated package may 2005 notes for stable and safe operation ; ? design the pcb pattern to minimize wiring length between opto-coupler and ipm s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. ? connect low impedance capacitor between the vcc and gnd terminal of each fast switching opto-coupler. ? fast switching opto-couplers: t plh , t phl 0.8 s, use high cmr type. ? slow switching opto-coupler: ctr > 100% ? use 4 isolated control power supplies (v d ). also, care should be taken to minimize the instantaneous voltage charge of the power supply. ? make inductance of dc bus line as small as possible, and minimize surge voltage using snubber capacitor between p and n terminal. ? use line noise filter capacitor (ex. 4.7nf) between each input ac line and ground to reject common-mode noise from ac line and improve noise immunity of the system. out si ot ot ot ot ot ot ot gnd gnd in vcc u v w b n p m if + C : interface which is the same as the u-phase out si gnd gnd in vcc out si gnd gnd in vcc out si gnd gnd in fo fo fo fo vcc out si gnd gnd in fo vcc out si gnd gnd in fo vcc vwp1 wp vwpc un vn vn1 wn vnc 1.5k 1.5k 1.5k 1.5k fo vvp1 vp vvpc 0.1 4.7k 1k 0.1 0.1 20k 20k 20k 10 10 10 20k 10 0.1 vfo wfo ufo vup1 up vupc br if if if 5v if out si gnd gnd in fo vcc v d v d v d v d fig. 8 application example circuit
mitsubishi pm50rlb060 flat-base type insulated package may 2005 performance curves collector-emitter saturation voltage v ce (sat) (v) collector-emitter saturation voltage (vs. ic) characteristics (inverter part ?typical) collector current i c (a) 2 1.5 1 0.5 0 0 10 20 30 40 50 60 70 v d = 15v t j = 25 c t j = 125 c 10 ? 10 0 10 0 23 57 57 10 1 10 ? 23 57 4 7 5 3 2 4 7 5 3 2 3 2 4 44 collector-emitter saturation voltage (vs. v d ) characteristics (inverter part ?typical) output characteristics (inverter part ?typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage v ce (sat) (v) control supply voltage v d (v) switching time characteristics (typical) switching time t c(on) , t c(off) ( s) collector current i c (a) 30 40 20 60 50 10 0 0 1 0.5 1.5 2 t j = 25 c 2 1.5 1 0.5 0 18 13 12 15 14 17 16 10 ? switching time t on , t off ( s) switching time characteristics (typical) collector current i c (a) 10 1 7 5 3 2 57 10 1 10 0 7 5 3 2 23 23 57 10 2 4 4 44 10 ? collector current i c (a) 10 1 7 5 3 2 57 10 1 10 0 7 5 3 2 23 23 57 10 2 4 4 4 t c(off) t c(on) t off t on i c = 50a t j = 25 c t j = 125 c v cc = 300v v d = 15v t j = 25 c t j = 125 c inductive load v cc = 300v v d = 15v t j = 25 c t j = 125 c inductive load e sw(on) v cc = 300v v d = 15v t j = 25 c t j = 125 c inductive load switching loss characteristics (typical) switching loss e sw(on) , e sw(off) (mj/pulse) 15v 13v v d = 17v t c(off) e sw(off)
mitsubishi pm50rlb060 flat-base type insulated package may 2005 collector recovery current i c (a) emitter-collector voltage v ec (v) diode forward characteristics (inverter part typical) 10 0 10 2 7 5 3 2 0 10 1 7 5 3 2 0.5 1 1.5 2 2.5 4 4 v d = 15v t j = 25 c t j = 125 c 30 10 20 0 25 5 15 35 0 1 0.5 1.5 2 t j = 25 c 15v 13v v d = 17v output characteristics (brake part typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage v ce (sat) (v) collector-emitter saturation voltage (vs. ic) characteristics (brake part typical) collector current i c (a) 2 1.5 1 0.5 0 0 10 20 30 40 v d = 15v t j = 25 c t j = 125 c collector-emitter saturation voltage (vs. v d ) characteristics (brake part typical) collector-emitter saturation voltage v ce (sat) (v) control supply voltage v d (v) 2 1.5 1 0.5 0 18 13 12 15 14 17 16 i c = 30a t j = 25 c t j = 125 c fwdi forward current i f (a) fwdi forward voltage v fm (v) diode forward characteristics (brake part typical) 0 0.5 1 1.5 2 2.5 v d = 15v t j = 25 c t j = 125 c 10 1 10 0 7 5 3 2 4 10 1 7 5 3 2 4 10 2 7 5 3 2 4 diode reverse recovery characteristics (typical) collector recovery current i c (a) reverse recovery time t rr ( s) reverse recovery current l rr (a) 10 2 10 0 7 5 3 2 23 57 10 1 10 1 7 5 3 2 10 2 4 4 10 0 10 2 7 5 3 2 10 1 7 5 3 2 4 4 423 23 57 4 i rr i rr v cc = 300v v d = 15v t j = 25 c t j = 125 c inductive load t rr t rr
mitsubishi pm50rlb060 flat-base type insulated package may 2005 10 3 10 0 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 3 23 57 10 2 23 57 10 1 10 5 23 57 10 4 23 57 23 57 10 0 23 57 10 1 time (s) single pulse igbt part; per unit base = r th(j c)q = 1.21 c/ w fwdi part; per unit base = r th(j c)f = 2.19 c/ w transient thermal impedance characteristics (brake part) normalized transient thermal impedance z th (j c) f c (khz) 0 10 20 30 40 50 25 0 5101520 v d = 15v t j = 25 c n-side p-side i d vs. f c characteristics (typical) i d (ma) transient thermal impedance characteristics (inverter part) normalized transient thermal impedance z th (j c) 10 3 10 0 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 3 23 57 10 2 23 57 10 1 10 5 23 57 10 4 23 57 23 57 10 0 23 57 10 1 time (s) single pulse igbt part; per unit base = r th(j c)q = 0.95 c/ w fwdi part; per unit base = r th(j c)f = 1.61 c/ w
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